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| 2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 3 12 3 * * * * Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. * Suitable for Switching regulator, DC - DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -30 20 -7 -28 -7 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SJ246 L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -25 V, VGS = 0 VDS = -10 V, ID = -1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.12 10 -100 -2.5 0.17 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A VGS = -10 V ID = -4 A VGS = -4 V VDS = -10 V ID = -4 A VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V ID = -4 V RL = 7.5 ------------------------------------------------ -- 0.21 0.31 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.0 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time -- -- -- -- -- -- -- -- 660 465 180 10 55 135 135 -1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -7 A, VGS = 0 IF = -7 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 90 -- s -------------------------------------------------------------------------------------- 2SJ246 L , 2SJ246 S Power vs. Temperature Derating 40 Pch (W) -50 -30 I D (A) -10 Maximum Safe Operation Area 10s 100s PW 1 30 = m DC 10 s Power Dissipation Drain Current 20 -3 -1 -0.3 Op m er s( 1 at ion sh ot (T ) c= 10 Operation in this area is limited by R DS(on) 25 C ) 0 50 100 Case Temperature 150 Tc (C) 200 -0.1 -0.3 -1 -3 -10 -30 -50 Drain to Source Voltage V DS (V) Ta = 25C Typical Output Characteristics -10 -5 V -6 V -10V -10 -4 V (A) Pulse test -3.5 V -8 Typical Transfer Characteristics Tc = -25C 25C 75C (A) -8 Pulse test -6 VDS = -10 V ID -6 Drain Current -4 -3 V -2 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Drain Current ID -4 -2 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ246 L , 2SJ246 S Static Drain to Source on State Resistance R DS (on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) -2.0 Pulse test -1.6 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse test 2 1 -1.2 I D = -5 A -1 A 0.5 VGS = -4 V -10 V -0.8 0.2 0.1 -0.4 -2 A 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS (V) 0.05 -0.1 -1 Drain Current -10 I D (A) -100 Static Drain to Source on State Resistance R DS (on) ( ) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse test 0.4 I D = -5 A -2 A 0.3 VGS = -4 V 0.2 -10 V 0.1 0 -40 -1 A, -2 A -5 A -1 A 10 Forward Transfer Admittance |y fs | (S) Forward Transfer Admittance vs. Drain Current Pusle test V DS = -10 V 5 -25C 2 Tc = 25C 75C 1 0 40 80 120 160 Case Temperature Tc (C) 0.5 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ246 L , 2SJ246 S Body to Drain Diode Reverse Recovery Time 200 t rr (ns) 10000 5000 (pF) 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time 2000 50 Capacitance C 1000 Ciss 500 Coss 200 100 0 Crss -10 -20 -30 Drain to Source Voltage -40 -50 V DS (V) 20 di/dt = 50 A/s, Ta = 25C VGS = 0, Pulse test 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) VDD = -10 V -25 V -20 VDS -40 VDD = -25 V -10 V -4 V GS (V) 0 0 Switching Characteristics 500 VGS = -10 V, PW = 2 s, VDD = -30 V, duty < 1 % = : td(off) tf 200 t (ns) Switching Time 100 50 tr 20 10 5 -0.1 -0.2 Drain to Source Voltage -8 -60 VGS -12 Gate to Source Voltage -80 I D= -7 A -8 -16 -24 -32 Gate Charge Qg (nc) -16 -20 -40 td(on) -100 0 -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ246 L , 2SJ246 S Reverse Drain Current vs. Source to Drain Voltage -10 (A) Pulse test -8 Reverse Drain Current I DR -6 -10 V -4 -5 V -2 0 0 VGS = 0, 5 V -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 V SD (V) 2SJ246 L , 2SJ246 S Normal Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (s) 1 10 Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL 90% Vin -10 V 50 V DD . = -30 V . Vout t d (on) 90% 10% tr t d (off) 90% 10% tf Vout Monitor Vin 10% |
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